Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

Abstract We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposi...

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Bibliographic Details
Main Authors: Zhongyunshen Zhu, Yuxin Song, Qimiao Chen, Zhenpu Zhang, Liyao Zhang, Yaoyao Li, Shumin Wang
Format: Article
Language:English
Published: SpringerOpen 2017-07-01
Series:Nanoscale Research Letters
Subjects:
Tensile strain
Ge nanowire
Finite element method
Direct bandgap
Mobility
Online Access:http://link.springer.com/article/10.1186/s11671-017-2243-1

Internet

http://link.springer.com/article/10.1186/s11671-017-2243-1

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