Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy

In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film. It was found that selected technological conditions for the performed chloride-hy...

Full description

Bibliographic Details
Main Authors: Pavel V. Seredin, Nikolay A. Kurilo, Obaid Radam Ali, Nikita S. Buylov, Dmitry L. Goloshchapov, Sergey Alexandrovich Ivkov, Alexandr S. Lenshin, Ivan N. Arsentyev, Alexey V. Nashchekin, Shukrilo Sh. Sharofidinov, Andrey M. Mizerov, Maksim S. Sobolev, Evgeniy V. Pirogov, Igor V. Semeykin
Format: Article
Language:English
Published: Voronezh State University 2023-03-01
Series:Конденсированные среды и межфазные границы
Subjects:
gan
aln
m-al2o3
chemical vapor-phase epitaxy
Online Access:https://journals.vsu.ru/kcmf/article/view/10978

Internet

https://journals.vsu.ru/kcmf/article/view/10978

Similar Items