Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO<sub>3</sub> Probed by Direct Current Methods
Layered van der Waals (vdW) semiconductors show great promise to overcome limitations imposed by traditional semiconductor materials. The synergistic combination of vdW semiconductors with other functional materials can offer novel working principles and device concepts for future nano- and optoelec...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-06-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/11/11/5181 |