Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film

Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film

Abstract This article reports on the charge transport characteristics across the potential barrier generated by a local dual‐gate modulation at the surface of p‐doped graphene via surface contact on a fluorocarbon (CF) thin film. Owing to simple physical contact, the strong electron affinity of the...

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Bibliographic Details
Main Authors: Yoonhyuck Yi, Yoojoo Yun, Eunmi Cho, Jinho Jeon, Hyunkyung Lee, Byeongwan Kim, Dong Han Ha, Sang‐Jin Lee, Haeyong Kang
Format: Article
Language:English
Published: Wiley-VCH 2023-04-01
Series:Advanced Materials Interfaces
Subjects:
dual‐gate field‐effect transistors
fluorocarbon thin films
gate‐tunable potential barrier
graphene
heavily p‐doping
surface charge transfer doping (SCTD)
Online Access:https://doi.org/10.1002/admi.202201883

Internet

https://doi.org/10.1002/admi.202201883

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