Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film
Abstract This article reports on the charge transport characteristics across the potential barrier generated by a local dual‐gate modulation at the surface of p‐doped graphene via surface contact on a fluorocarbon (CF) thin film. Owing to simple physical contact, the strong electron affinity of the...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-04-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202201883 |
| _version_ | 1827893232996974592 |
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| author | Yoonhyuck Yi Yoojoo Yun Eunmi Cho Jinho Jeon Hyunkyung Lee Byeongwan Kim Dong Han Ha Sang‐Jin Lee Haeyong Kang |
| author_facet | Yoonhyuck Yi Yoojoo Yun Eunmi Cho Jinho Jeon Hyunkyung Lee Byeongwan Kim Dong Han Ha Sang‐Jin Lee Haeyong Kang |
| author_sort | Yoonhyuck Yi |
| collection | DOAJ |
| description | Abstract This article reports on the charge transport characteristics across the potential barrier generated by a local dual‐gate modulation at the surface of p‐doped graphene via surface contact on a fluorocarbon (CF) thin film. Owing to simple physical contact, the strong electron affinity of the fluorine atoms in CF stably increases the hole density of graphene, which leads to a massive p‐doping effect in graphene. Then, potential barrier height can be generated and modulated across the channel by forming a local dual‐gate device structure. Different gate biases in dual‐gate operation can split electrical characteristics of a single graphene into highly conductive region and region of sparse charge density, creating large chemical potential difference at the boundary between the two which determines the value of barrier height. Moreover, the device characteristics follow a simple model of the metal–semiconductor junction well in addition to the effect of charge concentration discrepancy in graphene. These results reveal that it is possible to create an ideal and controllable potential barrier composed of a single material using the highly doped graphene with the local dual‐gate structure. |
| first_indexed | 2024-03-12T21:50:53Z |
| format | Article |
| id | doaj.art-23202681933e45518e10ee236c564641 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T21:50:53Z |
| publishDate | 2023-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-23202681933e45518e10ee236c5646412023-07-26T01:40:38ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-04-011011n/an/a10.1002/admi.202201883Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin FilmYoonhyuck Yi0Yoojoo Yun1Eunmi Cho2Jinho Jeon3Hyunkyung Lee4Byeongwan Kim5Dong Han Ha6Sang‐Jin Lee7Haeyong Kang8Department of Physics Pusan National University Busan 46241 South KoreaDepartment of Physics Pusan National University Busan 46241 South KoreaChemical Materials Solutions Center Korea Research Institute of Chemical Technology (KRICT) Daejeon 34114 South KoreaDepartment of Physics Pusan National University Busan 46241 South KoreaDepartment of Physics Pusan National University Busan 46241 South KoreaDepartment of Physics Pusan National University Busan 46241 South KoreaMaterials and Convergence Measurement Institute Korea Research Institute of Standards and Science (KRISS) Daejeon 34113 Republic of KoreaChemical Materials Solutions Center Korea Research Institute of Chemical Technology (KRICT) Daejeon 34114 South KoreaDepartment of Physics Pusan National University Busan 46241 South KoreaAbstract This article reports on the charge transport characteristics across the potential barrier generated by a local dual‐gate modulation at the surface of p‐doped graphene via surface contact on a fluorocarbon (CF) thin film. Owing to simple physical contact, the strong electron affinity of the fluorine atoms in CF stably increases the hole density of graphene, which leads to a massive p‐doping effect in graphene. Then, potential barrier height can be generated and modulated across the channel by forming a local dual‐gate device structure. Different gate biases in dual‐gate operation can split electrical characteristics of a single graphene into highly conductive region and region of sparse charge density, creating large chemical potential difference at the boundary between the two which determines the value of barrier height. Moreover, the device characteristics follow a simple model of the metal–semiconductor junction well in addition to the effect of charge concentration discrepancy in graphene. These results reveal that it is possible to create an ideal and controllable potential barrier composed of a single material using the highly doped graphene with the local dual‐gate structure.https://doi.org/10.1002/admi.202201883dual‐gate field‐effect transistorsfluorocarbon thin filmsgate‐tunable potential barriergrapheneheavily p‐dopingsurface charge transfer doping (SCTD) |
| spellingShingle | Yoonhyuck Yi Yoojoo Yun Eunmi Cho Jinho Jeon Hyunkyung Lee Byeongwan Kim Dong Han Ha Sang‐Jin Lee Haeyong Kang Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film Advanced Materials Interfaces dual‐gate field‐effect transistors fluorocarbon thin films gate‐tunable potential barrier graphene heavily p‐doping surface charge transfer doping (SCTD) |
| title | Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film |
| title_full | Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film |
| title_fullStr | Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film |
| title_full_unstemmed | Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film |
| title_short | Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film |
| title_sort | gate tunable potential barrier on dual gate graphene transistor with fluorocarbon thin film |
| topic | dual‐gate field‐effect transistors fluorocarbon thin films gate‐tunable potential barrier graphene heavily p‐doping surface charge transfer doping (SCTD) |
| url | https://doi.org/10.1002/admi.202201883 |
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