Fabrication of Black Silicon With Thermostable Infrared Absorption by Femtosecond Laser
Annealing-insensitive black silicon with high absorption below the silicon bandgap has been achieved by femtosecond laser direct writing. Spike microstructures with sizes ranging from 4 to 25 μm are formed on the surface layer of silicon substrate, and a large amount of phosphorous impuri...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7590103/ |