Effect of a-SiC<sub>x</sub>N<sub>y</sub>:H Encapsulation on the Stability and Photoluminescence Property of CsPbBr<sub>3</sub> Quantum Dots

Effect of a-SiC<sub>x</sub>N<sub>y</sub>:H Encapsulation on the Stability and Photoluminescence Property of CsPbBr<sub>3</sub> Quantum Dots

The effect of a-SiC<sub>x</sub>N<sub>y</sub>:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH<sub>4</sub>, CH<sub>4</sub>, and NH<sub>3</sub> a...

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Bibliographic Details
Main Authors: Zewen Lin, Zhenxu Lin, Yanqing Guo, Haixia Wu, Jie Song, Yi Zhang, Wenxing Zhang, Hongliang Li, Dejian Hou, Rui Huang
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Nanomaterials
Subjects:
a-SiC<sub>x</sub>N<sub>y</sub>:H encapsulation
CsPbBr<sub>3</sub> QDs
stability
photoluminescence
Online Access:https://www.mdpi.com/2079-4991/13/7/1228

Internet

https://www.mdpi.com/2079-4991/13/7/1228

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