| Summary: | The effect of a-SiC<sub>x</sub>N<sub>y</sub>:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH<sub>4</sub>, CH<sub>4</sub>, and NH<sub>3</sub> as the precursors, on the stability and photoluminescence of CsPbBr<sub>3</sub> quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr<sub>3</sub> QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr<sub>3</sub> QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr<sub>3</sub> QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 °C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr<sub>3</sub> QD thin films, thus holding potential for future developments in optoelectronic devices.
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