Space charge and trap energy level characteristics of SiC wide bandgap semiconductor
Charge carrier transport and accumulation in silicon carbide (SiC) wide bandgap semiconductors caused by the defect and impurity are likely to lead to serious performance degradation and failure of the semiconductor materials, and the high temperature effect makes the charge behaviors more complex....
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0085118 |