Formation of β-Be3N2 nanocrystallites in Be-implanted GaN
A small Be ion dose of 5 × 10 ^14 cm ^−2 was implanted in a 2 μ m thick GaN epilayer at an energy of 50 keV. The sample was characterized by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy techniques after a post-implantation rapid thermal annealing (RTA) treatment. T...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/abea59 |