Formation of β-Be3N2 nanocrystallites in Be-implanted GaN
A small Be ion dose of 5 × 10 ^14 cm ^−2 was implanted in a 2 μ m thick GaN epilayer at an energy of 50 keV. The sample was characterized by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy techniques after a post-implantation rapid thermal annealing (RTA) treatment. T...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/abea59 |
| Summary: | A small Be ion dose of 5 × 10 ^14 cm ^−2 was implanted in a 2 μ m thick GaN epilayer at an energy of 50 keV. The sample was characterized by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy techniques after a post-implantation rapid thermal annealing (RTA) treatment. The HRTEM images show the crystallographic (1 1 0) and (0 0 2) planes of β -Be _3 N _2 . Two characteristic parallelograms drawn in Fast Fourier transform (FFT) image support the formation of β -Be _3 N _2 nanocrystallites in RTA treated sample. Two Raman peaks at 168 and 199 cm ^−1 are observed in the Raman spectrum of the sample that are assigned to β -Be _3 N _2 on the basis of group theory and HRTEM data. The Raman peak at 168 cm ^−1 is found close to the K point in the first Brillouin zone of β -Be _3 N _2 while the peak at 199 cm ^−1 is assigned as a combination mode of the fundamental Raman modes of β -Be _3 N _2 . |
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| ISSN: | 2053-1591 |