Formation of β-Be3N2 nanocrystallites in Be-implanted GaN
A small Be ion dose of 5 × 10 ^14 cm ^−2 was implanted in a 2 μ m thick GaN epilayer at an energy of 50 keV. The sample was characterized by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy techniques after a post-implantation rapid thermal annealing (RTA) treatment. T...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/abea59 |
| _version_ | 1797746653802790912 |
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| author | Yi Peng Muhammad Farooq Saleem Wenwang Wei Keyu Ji Qi Guo Yang Yue Jie Chen Xuan Zhang Yukun Wang Wenhong Sun |
| author_facet | Yi Peng Muhammad Farooq Saleem Wenwang Wei Keyu Ji Qi Guo Yang Yue Jie Chen Xuan Zhang Yukun Wang Wenhong Sun |
| author_sort | Yi Peng |
| collection | DOAJ |
| description | A small Be ion dose of 5 × 10 ^14 cm ^−2 was implanted in a 2 μ m thick GaN epilayer at an energy of 50 keV. The sample was characterized by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy techniques after a post-implantation rapid thermal annealing (RTA) treatment. The HRTEM images show the crystallographic (1 1 0) and (0 0 2) planes of β -Be _3 N _2 . Two characteristic parallelograms drawn in Fast Fourier transform (FFT) image support the formation of β -Be _3 N _2 nanocrystallites in RTA treated sample. Two Raman peaks at 168 and 199 cm ^−1 are observed in the Raman spectrum of the sample that are assigned to β -Be _3 N _2 on the basis of group theory and HRTEM data. The Raman peak at 168 cm ^−1 is found close to the K point in the first Brillouin zone of β -Be _3 N _2 while the peak at 199 cm ^−1 is assigned as a combination mode of the fundamental Raman modes of β -Be _3 N _2 . |
| first_indexed | 2024-03-12T15:39:55Z |
| format | Article |
| id | doaj.art-234ec9c22fc245188960719aab757abe |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:39:55Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-234ec9c22fc245188960719aab757abe2023-08-09T16:00:44ZengIOP PublishingMaterials Research Express2053-15912021-01-018303500310.1088/2053-1591/abea59Formation of β-Be3N2 nanocrystallites in Be-implanted GaNYi Peng0Muhammad Farooq Saleem1Wenwang Wei2Keyu Ji3Qi Guo4Yang Yue5Jie Chen6Xuan Zhang7Yukun Wang8Wenhong Sun9https://orcid.org/0000-0002-2936-767XResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University , 530004 Nanning, People’s Republic of China; Guangxi Key Laboratory of Processing for Non-ferrous Metallic and Featured Materials, 530004 Nanning, People’s Republic of ChinaA small Be ion dose of 5 × 10 ^14 cm ^−2 was implanted in a 2 μ m thick GaN epilayer at an energy of 50 keV. The sample was characterized by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy techniques after a post-implantation rapid thermal annealing (RTA) treatment. The HRTEM images show the crystallographic (1 1 0) and (0 0 2) planes of β -Be _3 N _2 . Two characteristic parallelograms drawn in Fast Fourier transform (FFT) image support the formation of β -Be _3 N _2 nanocrystallites in RTA treated sample. Two Raman peaks at 168 and 199 cm ^−1 are observed in the Raman spectrum of the sample that are assigned to β -Be _3 N _2 on the basis of group theory and HRTEM data. The Raman peak at 168 cm ^−1 is found close to the K point in the first Brillouin zone of β -Be _3 N _2 while the peak at 199 cm ^−1 is assigned as a combination mode of the fundamental Raman modes of β -Be _3 N _2 .https://doi.org/10.1088/2053-1591/abea59β-Be3N2GaNIon implantationHRTEMRaman spectroscopy |
| spellingShingle | Yi Peng Muhammad Farooq Saleem Wenwang Wei Keyu Ji Qi Guo Yang Yue Jie Chen Xuan Zhang Yukun Wang Wenhong Sun Formation of β-Be3N2 nanocrystallites in Be-implanted GaN Materials Research Express β-Be3N2 GaN Ion implantation HRTEM Raman spectroscopy |
| title | Formation of β-Be3N2 nanocrystallites in Be-implanted GaN |
| title_full | Formation of β-Be3N2 nanocrystallites in Be-implanted GaN |
| title_fullStr | Formation of β-Be3N2 nanocrystallites in Be-implanted GaN |
| title_full_unstemmed | Formation of β-Be3N2 nanocrystallites in Be-implanted GaN |
| title_short | Formation of β-Be3N2 nanocrystallites in Be-implanted GaN |
| title_sort | formation of β be3n2 nanocrystallites in be implanted gan |
| topic | β-Be3N2 GaN Ion implantation HRTEM Raman spectroscopy |
| url | https://doi.org/10.1088/2053-1591/abea59 |
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