Formation of β-Be3N2 nanocrystallites in Be-implanted GaN

Formation of β-Be3N2 nanocrystallites in Be-implanted GaN

A small Be ion dose of 5 × 10 ^14 cm ^−2 was implanted in a 2 μ m thick GaN epilayer at an energy of 50 keV. The sample was characterized by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy techniques after a post-implantation rapid thermal annealing (RTA) treatment. T...

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Bibliographic Details
Main Authors:	Yi Peng, Muhammad Farooq Saleem, Wenwang Wei, Keyu Ji, Qi Guo, Yang Yue, Jie Chen, Xuan Zhang, Yukun Wang, Wenhong Sun
Format:	Article
Language:	English
Published:	IOP Publishing 2021-01-01
Series:	Materials Research Express
Subjects:	β-Be3N2 GaN Ion implantation HRTEM Raman spectroscopy
Online Access:	https://doi.org/10.1088/2053-1591/abea59

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