3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications

This article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high hollowed ratio of the applied 8-inch high-resistivity...

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Main Authors: Zhiyu Wang, Yujian Shu, Siyuan Ma, Xi Guo, Wei Yang, Xu Ding, Xiaofeng Lyu, Faxin Yu
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/12/1/194
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author Zhiyu Wang
Yujian Shu
Siyuan Ma
Xi Guo
Wei Yang
Xu Ding
Xiaofeng Lyu
Faxin Yu
author_facet Zhiyu Wang
Yujian Shu
Siyuan Ma
Xi Guo
Wei Yang
Xu Ding
Xiaofeng Lyu
Faxin Yu
author_sort Zhiyu Wang
collection DOAJ
description This article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high hollowed ratio of the applied 8-inch high-resistivity-silicon (HR-Si) interposer wafers is presented to form both compact filter channels. Above the interdigital filter patterns fabricated on the bottom interposer wafer, deep cavities are etched in the cap interposer wafer to improve the quality factor of the filter bank. Besides the cavities, the cap interposer wafer is 35% hollow inside, which two bare dies of GaAs single-pole double-throw (SPDT) switches and two thin film resistors are attached to the bottom interposer after the wafer-to-wafer (W2W) bonding. To ensure good out-of-band performance, a 3D EM co-simulation of the switch layout at the chip level and filter patterns at the package level is applied. Measurement results show that the switchable filter bank achieves a high isolation of 50 dB and a competitive shape factor (BW<sub>30dB</sub>/BW<sub>3dB</sub>) of about 1.3. In addition, the size of the switchable filter bank is only 7.0 mm × 3.5 mm × 0.6 mm, and the weight is only 0.1 g.
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spelling doaj.art-235bbd18df8a48788a9ccdcf1c7ca1512023-11-16T15:12:24ZengMDPI AGElectronics2079-92922022-12-0112119410.3390/electronics120101943D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave ApplicationsZhiyu Wang0Yujian Shu1Siyuan Ma2Xi Guo3Wei Yang4Xu Ding5Xiaofeng Lyu6Faxin Yu7School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaChina International Engineering Consulting Corporation, Beijing 100048, ChinaZhejiang Chengchang Technology Co., Ltd., Hangzhou 310030, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaThis article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high hollowed ratio of the applied 8-inch high-resistivity-silicon (HR-Si) interposer wafers is presented to form both compact filter channels. Above the interdigital filter patterns fabricated on the bottom interposer wafer, deep cavities are etched in the cap interposer wafer to improve the quality factor of the filter bank. Besides the cavities, the cap interposer wafer is 35% hollow inside, which two bare dies of GaAs single-pole double-throw (SPDT) switches and two thin film resistors are attached to the bottom interposer after the wafer-to-wafer (W2W) bonding. To ensure good out-of-band performance, a 3D EM co-simulation of the switch layout at the chip level and filter patterns at the package level is applied. Measurement results show that the switchable filter bank achieves a high isolation of 50 dB and a competitive shape factor (BW<sub>30dB</sub>/BW<sub>3dB</sub>) of about 1.3. In addition, the size of the switchable filter bank is only 7.0 mm × 3.5 mm × 0.6 mm, and the weight is only 0.1 g.https://www.mdpi.com/2079-9292/12/1/194three-dimensional heterogenous-integration (3DHI)switchable filter bankwafer-to-wafer (W2W) bondingHR-Si interposerthrough-silicon via (TSV)
spellingShingle Zhiyu Wang
Yujian Shu
Siyuan Ma
Xi Guo
Wei Yang
Xu Ding
Xiaofeng Lyu
Faxin Yu
3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications
Electronics
three-dimensional heterogenous-integration (3DHI)
switchable filter bank
wafer-to-wafer (W2W) bonding
HR-Si interposer
through-silicon via (TSV)
title 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications
title_full 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications
title_fullStr 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications
title_full_unstemmed 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications
title_short 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications
title_sort 3d heterogenous integrated wideband switchable bandpass filter bank for millimeter wave applications
topic three-dimensional heterogenous-integration (3DHI)
switchable filter bank
wafer-to-wafer (W2W) bonding
HR-Si interposer
through-silicon via (TSV)
url https://www.mdpi.com/2079-9292/12/1/194
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