3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications
This article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high hollowed ratio of the applied 8-inch high-resistivity...
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MDPI AG
2022-12-01
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Online Access: | https://www.mdpi.com/2079-9292/12/1/194 |
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author | Zhiyu Wang Yujian Shu Siyuan Ma Xi Guo Wei Yang Xu Ding Xiaofeng Lyu Faxin Yu |
author_facet | Zhiyu Wang Yujian Shu Siyuan Ma Xi Guo Wei Yang Xu Ding Xiaofeng Lyu Faxin Yu |
author_sort | Zhiyu Wang |
collection | DOAJ |
description | This article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high hollowed ratio of the applied 8-inch high-resistivity-silicon (HR-Si) interposer wafers is presented to form both compact filter channels. Above the interdigital filter patterns fabricated on the bottom interposer wafer, deep cavities are etched in the cap interposer wafer to improve the quality factor of the filter bank. Besides the cavities, the cap interposer wafer is 35% hollow inside, which two bare dies of GaAs single-pole double-throw (SPDT) switches and two thin film resistors are attached to the bottom interposer after the wafer-to-wafer (W2W) bonding. To ensure good out-of-band performance, a 3D EM co-simulation of the switch layout at the chip level and filter patterns at the package level is applied. Measurement results show that the switchable filter bank achieves a high isolation of 50 dB and a competitive shape factor (BW<sub>30dB</sub>/BW<sub>3dB</sub>) of about 1.3. In addition, the size of the switchable filter bank is only 7.0 mm × 3.5 mm × 0.6 mm, and the weight is only 0.1 g. |
first_indexed | 2024-03-11T10:03:40Z |
format | Article |
id | doaj.art-235bbd18df8a48788a9ccdcf1c7ca151 |
institution | Directory Open Access Journal |
issn | 2079-9292 |
language | English |
last_indexed | 2024-03-11T10:03:40Z |
publishDate | 2022-12-01 |
publisher | MDPI AG |
record_format | Article |
series | Electronics |
spelling | doaj.art-235bbd18df8a48788a9ccdcf1c7ca1512023-11-16T15:12:24ZengMDPI AGElectronics2079-92922022-12-0112119410.3390/electronics120101943D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave ApplicationsZhiyu Wang0Yujian Shu1Siyuan Ma2Xi Guo3Wei Yang4Xu Ding5Xiaofeng Lyu6Faxin Yu7School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaChina International Engineering Consulting Corporation, Beijing 100048, ChinaZhejiang Chengchang Technology Co., Ltd., Hangzhou 310030, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaThis article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high hollowed ratio of the applied 8-inch high-resistivity-silicon (HR-Si) interposer wafers is presented to form both compact filter channels. Above the interdigital filter patterns fabricated on the bottom interposer wafer, deep cavities are etched in the cap interposer wafer to improve the quality factor of the filter bank. Besides the cavities, the cap interposer wafer is 35% hollow inside, which two bare dies of GaAs single-pole double-throw (SPDT) switches and two thin film resistors are attached to the bottom interposer after the wafer-to-wafer (W2W) bonding. To ensure good out-of-band performance, a 3D EM co-simulation of the switch layout at the chip level and filter patterns at the package level is applied. Measurement results show that the switchable filter bank achieves a high isolation of 50 dB and a competitive shape factor (BW<sub>30dB</sub>/BW<sub>3dB</sub>) of about 1.3. In addition, the size of the switchable filter bank is only 7.0 mm × 3.5 mm × 0.6 mm, and the weight is only 0.1 g.https://www.mdpi.com/2079-9292/12/1/194three-dimensional heterogenous-integration (3DHI)switchable filter bankwafer-to-wafer (W2W) bondingHR-Si interposerthrough-silicon via (TSV) |
spellingShingle | Zhiyu Wang Yujian Shu Siyuan Ma Xi Guo Wei Yang Xu Ding Xiaofeng Lyu Faxin Yu 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications Electronics three-dimensional heterogenous-integration (3DHI) switchable filter bank wafer-to-wafer (W2W) bonding HR-Si interposer through-silicon via (TSV) |
title | 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications |
title_full | 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications |
title_fullStr | 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications |
title_full_unstemmed | 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications |
title_short | 3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications |
title_sort | 3d heterogenous integrated wideband switchable bandpass filter bank for millimeter wave applications |
topic | three-dimensional heterogenous-integration (3DHI) switchable filter bank wafer-to-wafer (W2W) bonding HR-Si interposer through-silicon via (TSV) |
url | https://www.mdpi.com/2079-9292/12/1/194 |
work_keys_str_mv | AT zhiyuwang 3dheterogenousintegratedwidebandswitchablebandpassfilterbankformillimeterwaveapplications AT yujianshu 3dheterogenousintegratedwidebandswitchablebandpassfilterbankformillimeterwaveapplications AT siyuanma 3dheterogenousintegratedwidebandswitchablebandpassfilterbankformillimeterwaveapplications AT xiguo 3dheterogenousintegratedwidebandswitchablebandpassfilterbankformillimeterwaveapplications AT weiyang 3dheterogenousintegratedwidebandswitchablebandpassfilterbankformillimeterwaveapplications AT xuding 3dheterogenousintegratedwidebandswitchablebandpassfilterbankformillimeterwaveapplications AT xiaofenglyu 3dheterogenousintegratedwidebandswitchablebandpassfilterbankformillimeterwaveapplications AT faxinyu 3dheterogenousintegratedwidebandswitchablebandpassfilterbankformillimeterwaveapplications |