Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor

Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor

Abstract Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time‐reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes can be provided by recent discoveries of a time‐reversal...

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Bibliographic Details
Main Authors: Seo‐Jin Kim, Jihang Zhu, Mario M. Piva, Marcus Schmidt, Dorsa Fartab, Andrew P. Mackenzie, Michael Baenitz, Michael Nicklas, Helge Rosner, Ashley M. Cook, Rafael González‐Hernández, Libor Šmejkal, Haijing Zhang
Format: Article
Language:English
Published: Wiley 2024-02-01
Series:Advanced Science
Subjects:
anomalous Hall effect
Berry curvature
ionic gating
magnetism
polar structure
Online Access:https://doi.org/10.1002/advs.202307306

Internet

https://doi.org/10.1002/advs.202307306

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