Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor
Abstract Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time‐reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes can be provided by recent discoveries of a time‐reversal...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2024-02-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202307306 |
| _version_ | 1797319194401832960 |
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| author | Seo‐Jin Kim Jihang Zhu Mario M. Piva Marcus Schmidt Dorsa Fartab Andrew P. Mackenzie Michael Baenitz Michael Nicklas Helge Rosner Ashley M. Cook Rafael González‐Hernández Libor Šmejkal Haijing Zhang |
| author_facet | Seo‐Jin Kim Jihang Zhu Mario M. Piva Marcus Schmidt Dorsa Fartab Andrew P. Mackenzie Michael Baenitz Michael Nicklas Helge Rosner Ashley M. Cook Rafael González‐Hernández Libor Šmejkal Haijing Zhang |
| author_sort | Seo‐Jin Kim |
| collection | DOAJ |
| description | Abstract Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time‐reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes can be provided by recent discoveries of a time‐reversal symmetry breaking anomalous Hall effect (AHE) in noncollinear magnets and altermagnets, but hitherto reported bulk materials are not polar. Here, the authors report the observation of a spontaneous AHE in doped AgCrSe2, a layered polar semiconductor with an antiferromagnetic coupling between Cr spins in adjacent layers. The anomalous Hall resistivity 3 μΩcm is comparable to the largest observed in compensated magnetic systems to date, and is rapidly switched off when the angle of an applied magnetic field is rotated to ≈80° from the crystalline c‐axis. The ionic gating experiments show that the anomalous Hall conductivity magnitude can be enhanced by modulating the p‐type carrier density. They also present theoretical results that suggest the AHE is driven by Berry curvature due to noncollinear antiferromagnetic correlations among Cr spins, which are consistent with the previously suggested magnetic ordering in AgCrSe2. The results open the possibility to study the interplay of magnetic and ferroelectric‐like responses in this fascinating class of materials. |
| first_indexed | 2024-03-08T04:03:19Z |
| format | Article |
| id | doaj.art-235f3ebad08c45c28be3b5cf38b32d15 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-08T04:03:19Z |
| publishDate | 2024-02-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-235f3ebad08c45c28be3b5cf38b32d152024-02-09T08:26:35ZengWileyAdvanced Science2198-38442024-02-01116n/an/a10.1002/advs.202307306Observation of the Anomalous Hall Effect in a Layered Polar SemiconductorSeo‐Jin Kim0Jihang Zhu1Mario M. Piva2Marcus Schmidt3Dorsa Fartab4Andrew P. Mackenzie5Michael Baenitz6Michael Nicklas7Helge Rosner8Ashley M. Cook9Rafael González‐Hernández10Libor Šmejkal11Haijing Zhang12Max Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyMax Planck Institute for the Physics of Complex Systems 01187 Dresden GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyInstitut für Physik Johannes Gutenberg Universität Mainz 55128 Mainz GermanyInstitut für Physik Johannes Gutenberg Universität Mainz 55128 Mainz GermanyMax Planck Institute for Chemical Physics of Solids 01187 Dresden GermanyAbstract Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time‐reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes can be provided by recent discoveries of a time‐reversal symmetry breaking anomalous Hall effect (AHE) in noncollinear magnets and altermagnets, but hitherto reported bulk materials are not polar. Here, the authors report the observation of a spontaneous AHE in doped AgCrSe2, a layered polar semiconductor with an antiferromagnetic coupling between Cr spins in adjacent layers. The anomalous Hall resistivity 3 μΩcm is comparable to the largest observed in compensated magnetic systems to date, and is rapidly switched off when the angle of an applied magnetic field is rotated to ≈80° from the crystalline c‐axis. The ionic gating experiments show that the anomalous Hall conductivity magnitude can be enhanced by modulating the p‐type carrier density. They also present theoretical results that suggest the AHE is driven by Berry curvature due to noncollinear antiferromagnetic correlations among Cr spins, which are consistent with the previously suggested magnetic ordering in AgCrSe2. The results open the possibility to study the interplay of magnetic and ferroelectric‐like responses in this fascinating class of materials.https://doi.org/10.1002/advs.202307306anomalous Hall effectBerry curvatureionic gatingmagnetismpolar structure |
| spellingShingle | Seo‐Jin Kim Jihang Zhu Mario M. Piva Marcus Schmidt Dorsa Fartab Andrew P. Mackenzie Michael Baenitz Michael Nicklas Helge Rosner Ashley M. Cook Rafael González‐Hernández Libor Šmejkal Haijing Zhang Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor Advanced Science anomalous Hall effect Berry curvature ionic gating magnetism polar structure |
| title | Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor |
| title_full | Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor |
| title_fullStr | Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor |
| title_full_unstemmed | Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor |
| title_short | Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor |
| title_sort | observation of the anomalous hall effect in a layered polar semiconductor |
| topic | anomalous Hall effect Berry curvature ionic gating magnetism polar structure |
| url | https://doi.org/10.1002/advs.202307306 |
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