Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

Abstract This letter presents magnetic tunnel junction based spintronic devices completely implemented in a hybrid semiconductor process that comprises a complementary metal oxide semiconductor and a magnetic tunnel junction technology. To demonstrate the coexistence of both complementary metal oxid...

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Bibliographic Details
Main Authors: Rui Ma, Ahmed Sidi El Valli, Martin Kreißig, Gregory Di Pendina, Florian Protze, Ursula Ebels, Guillaume Prenat, Antoine Chavent, Vadym Iurchuk, Ricardo Sousa, Laurent Vila, Frank Ellinger, Jürgen Langer, Jerzy Wrona, Ioan‐Lucian Prejbeanu
Format: Article
Language:English
Published: Wiley 2021-03-01
Series:Electronics Letters
Subjects:
Oscillators
CMOS integrated circuits
Magneto-acoustic, magnetoresistive, magnetostrictive and magnetostatic wave devices
Peripheral interfaces
Online Access:https://doi.org/10.1049/ell2.12103

Internet

https://doi.org/10.1049/ell2.12103

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