Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices

Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices

Fully transparent ITO/LaAlO<sub>3</sub>/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al<sub>2</sub>O<sub>3</sub>/ITO structure devices were set for comparison. The electrical characteristics of the devices...

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Bibliographic Details
Main Authors: Guodu Han, Yanning Chen, Hongxia Liu, Dong Wang, Rundi Qiao
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Electronics
Subjects:
RRAM
LaAlO<sub>3</sub>
transparent
resistive switching characteristics
Online Access:https://www.mdpi.com/2079-9292/10/3/272

Internet

https://www.mdpi.com/2079-9292/10/3/272

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