Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices
Fully transparent ITO/LaAlO<sub>3</sub>/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al<sub>2</sub>O<sub>3</sub>/ITO structure devices were set for comparison. The electrical characteristics of the devices...
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| Format: | Article |
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MDPI AG
2021-01-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/3/272 |
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| author | Guodu Han Yanning Chen Hongxia Liu Dong Wang Rundi Qiao |
| author_facet | Guodu Han Yanning Chen Hongxia Liu Dong Wang Rundi Qiao |
| author_sort | Guodu Han |
| collection | DOAJ |
| description | Fully transparent ITO/LaAlO<sub>3</sub>/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al<sub>2</sub>O<sub>3</sub>/ITO structure devices were set for comparison. The electrical characteristics of the devices were analyzed by Agilent B1500A semiconductor analyzer. Compared with the ITO/Al<sub>2</sub>O<sub>3</sub>/ITO RRAM devices, the current stability, SET/RESET voltage distribution, and retention characteristic of the ITO/LaAlO<sub>3</sub>/ITO RRAM devices have been greatly improved. In the visible light range, the light transmittance of the device is about 80%, that of the LaAlO<sub>3</sub> layer is about 95%, the on-off ratio of the device is greater than 40, and the data retention time is longer than 10,000 s. The devices have great optical and electrical properties and have huge application potential as fully transparent RRAM devices. |
| first_indexed | 2024-03-09T03:52:13Z |
| format | Article |
| id | doaj.art-23a131ecdcb94c4f8cbc5a340fb24a51 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T03:52:13Z |
| publishDate | 2021-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-23a131ecdcb94c4f8cbc5a340fb24a512023-12-03T14:24:53ZengMDPI AGElectronics2079-92922021-01-0110327210.3390/electronics10030272Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM DevicesGuodu Han0Yanning Chen1Hongxia Liu2Dong Wang3Rundi Qiao4Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Co., Ltd. Beijing 102200, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, ChinaFully transparent ITO/LaAlO<sub>3</sub>/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al<sub>2</sub>O<sub>3</sub>/ITO structure devices were set for comparison. The electrical characteristics of the devices were analyzed by Agilent B1500A semiconductor analyzer. Compared with the ITO/Al<sub>2</sub>O<sub>3</sub>/ITO RRAM devices, the current stability, SET/RESET voltage distribution, and retention characteristic of the ITO/LaAlO<sub>3</sub>/ITO RRAM devices have been greatly improved. In the visible light range, the light transmittance of the device is about 80%, that of the LaAlO<sub>3</sub> layer is about 95%, the on-off ratio of the device is greater than 40, and the data retention time is longer than 10,000 s. The devices have great optical and electrical properties and have huge application potential as fully transparent RRAM devices.https://www.mdpi.com/2079-9292/10/3/272RRAMLaAlO<sub>3</sub>transparentresistive switching characteristics |
| spellingShingle | Guodu Han Yanning Chen Hongxia Liu Dong Wang Rundi Qiao Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices Electronics RRAM LaAlO<sub>3</sub> transparent resistive switching characteristics |
| title | Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices |
| title_full | Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices |
| title_fullStr | Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices |
| title_full_unstemmed | Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices |
| title_short | Impacts of LaOx Doping on the Performance of ITO/Al<sub>2</sub>O<sub>3</sub>/ITO Transparent RRAM Devices |
| title_sort | impacts of laox doping on the performance of ito al sub 2 sub o sub 3 sub ito transparent rram devices |
| topic | RRAM LaAlO<sub>3</sub> transparent resistive switching characteristics |
| url | https://www.mdpi.com/2079-9292/10/3/272 |
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