RADIATION RESISTANCE SIMULATION OF LOGICAL CMOS INTEGRATED CIRCUITS ELEMENTS

The software to simulate radiation resistance of MOSFET transistors, the basic elements of CMOS integrated circuits, is presented. The software performs visualization and analysis of volt-ampere characteristics of p - and n -channel transistors, extraction of «radiation sensitive» SPICE parameters a...

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Bibliographic Details
Main Authors: A. P. Lazar, F. P. Korshunov
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
Online Access:https://doklady.bsuir.by/jour/article/view/200