Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing
Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers deposited via atomic layer deposition (ALD) using tetra...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4982068 |