Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing
Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers deposited via atomic layer deposition (ALD) using tetra...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2017-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4982068 |
| _version_ | 1819152531003015168 |
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| author | Seungjin Lee Seokyoon Shin Giyul Ham Juhyun Lee Hyeongsu Choi Hyunwoo Park Hyeongtag Jeon |
| author_facet | Seungjin Lee Seokyoon Shin Giyul Ham Juhyun Lee Hyeongsu Choi Hyunwoo Park Hyeongtag Jeon |
| author_sort | Seungjin Lee |
| collection | DOAJ |
| description | Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers deposited via atomic layer deposition (ALD) using tetrakis(dimethylamino)tin (TDMASn) as a Sn precursor and H2S gas as a sulfur source at low temperature (150° C). The crystallinity of SnS2 was improved by H2S gas annealing. We carried out H2S gas annealing at various conditions (250° C, 300° C, 350° C, and using a three-step method). Angle-resolved X-ray photoelectron spectroscopy (ARXPS) results revealed the valence state corresponding to Sn4+ and S2- in the SnS2 annealed with H2S gas. The SnS2 annealed with H2S gas had a hexagonal structure, as measured via X-ray diffraction (XRD) and the clearly out-of-plane (A1g) mode in Raman spectroscopy. The crystallinity of SnS2 was improved after H2S annealing and was confirmed using the XRD full-width at half-maximum (FWHM). In addition, high-resolution transmission electron microscopy (HR-TEM) images indicated a clear layered structure. |
| first_indexed | 2024-12-22T14:50:46Z |
| format | Article |
| id | doaj.art-23b170d29db943b0ad9cd8889542213c |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T14:50:46Z |
| publishDate | 2017-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-23b170d29db943b0ad9cd8889542213c2022-12-21T18:22:20ZengAIP Publishing LLCAIP Advances2158-32262017-04-0174045307045307-710.1063/1.4982068044704ADVCharacteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealingSeungjin Lee0Seokyoon Shin1Giyul Ham2Juhyun Lee3Hyeongsu Choi4Hyunwoo Park5Hyeongtag Jeon6Division of Materials Science and Engineering, Hanyang University, Seoul, South KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul, South KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul, South KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul, South KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul, South KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul, South KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul, South KoreaTin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers deposited via atomic layer deposition (ALD) using tetrakis(dimethylamino)tin (TDMASn) as a Sn precursor and H2S gas as a sulfur source at low temperature (150° C). The crystallinity of SnS2 was improved by H2S gas annealing. We carried out H2S gas annealing at various conditions (250° C, 300° C, 350° C, and using a three-step method). Angle-resolved X-ray photoelectron spectroscopy (ARXPS) results revealed the valence state corresponding to Sn4+ and S2- in the SnS2 annealed with H2S gas. The SnS2 annealed with H2S gas had a hexagonal structure, as measured via X-ray diffraction (XRD) and the clearly out-of-plane (A1g) mode in Raman spectroscopy. The crystallinity of SnS2 was improved after H2S annealing and was confirmed using the XRD full-width at half-maximum (FWHM). In addition, high-resolution transmission electron microscopy (HR-TEM) images indicated a clear layered structure.http://dx.doi.org/10.1063/1.4982068 |
| spellingShingle | Seungjin Lee Seokyoon Shin Giyul Ham Juhyun Lee Hyeongsu Choi Hyunwoo Park Hyeongtag Jeon Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing AIP Advances |
| title | Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing |
| title_full | Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing |
| title_fullStr | Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing |
| title_full_unstemmed | Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing |
| title_short | Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing |
| title_sort | characteristics of layered tin disulfide deposited by atomic layer deposition with h2s annealing |
| url | http://dx.doi.org/10.1063/1.4982068 |
| work_keys_str_mv | AT seungjinlee characteristicsoflayeredtindisulfidedepositedbyatomiclayerdepositionwithh2sannealing AT seokyoonshin characteristicsoflayeredtindisulfidedepositedbyatomiclayerdepositionwithh2sannealing AT giyulham characteristicsoflayeredtindisulfidedepositedbyatomiclayerdepositionwithh2sannealing AT juhyunlee characteristicsoflayeredtindisulfidedepositedbyatomiclayerdepositionwithh2sannealing AT hyeongsuchoi characteristicsoflayeredtindisulfidedepositedbyatomiclayerdepositionwithh2sannealing AT hyunwoopark characteristicsoflayeredtindisulfidedepositedbyatomiclayerdepositionwithh2sannealing AT hyeongtagjeon characteristicsoflayeredtindisulfidedepositedbyatomiclayerdepositionwithh2sannealing |