Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers deposited via atomic layer deposition (ALD) using tetra...

Full description

Bibliographic Details
Main Authors: Seungjin Lee, Seokyoon Shin, Giyul Ham, Juhyun Lee, Hyeongsu Choi, Hyunwoo Park, Hyeongtag Jeon
Format: Article
Language:English
Published: AIP Publishing LLC 2017-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4982068

Similar Items

Similar Items