Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress

1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with...

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Autors principals: Qianlan Hu, Chengru Gu, Dan Zhan, Xuefei Li, Yanqing Wu
Format: Article
Idioma:English
Publicat: IEEE 2021-01-01
Col·lecció:IEEE Journal of the Electron Devices Society
Matèries:
GaN MOS-HEMTs
1/f noise
trapping effect
phonon scattering
carrier-number-fluctuation
mobility-fluctuation
Accés en línia:https://ieeexplore.ieee.org/document/9417086/

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https://ieeexplore.ieee.org/document/9417086/

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