Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress
1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with...
| Үндсэн зохиолчид: | , , , , |
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| Формат: | Өгүүллэг |
| Хэл сонгох: | English |
| Хэвлэсэн: |
IEEE
2021-01-01
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| Цуврал: | IEEE Journal of the Electron Devices Society |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://ieeexplore.ieee.org/document/9417086/ |