Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates
The realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development of transducers for applications with a working temperature up to about 600 °C. The present paper deals with the realization of AlN thick films by means of reactive magnetron...
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MDPI AG
2022-03-01
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| author | Daniele Desideri Enrico Bernardo Alain Jody Corso Federico Moro Maria Guglielmina Pelizzo |
| author_facet | Daniele Desideri Enrico Bernardo Alain Jody Corso Federico Moro Maria Guglielmina Pelizzo |
| author_sort | Daniele Desideri |
| collection | DOAJ |
| description | The realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development of transducers for applications with a working temperature up to about 600 °C. The present paper deals with the realization of AlN thick films by means of reactive magnetron sputtering with a pulsed DC power supply, operating in continuous mode for 50 h. Two values (0.4 and 0.8) of nitrogen concentration were used; operative pressure and power were set at 0.3 Pa and 150 W, respectively. The thickness of the obtained aluminum nitride films on the aluminum substrate, assessed with a profilometer, varied from 20 to 30 µm. The preferential orientation of AlN crystals was verified by X-ray diffraction. Finally, as the main focus of the investigation, the films underwent electrical characterization by means of an LCR-meter used on a parallel plate capacitor set-up and a test system based on a cantilever beam configuration. AlN conductivity and <i>ε</i><sub>33</sub> permittivity were derived in the 100 Hz–300 kHz frequency range. Magnetron sputtering operation with nitrogen concentration equal to 0.4 resulted in the preferred operative condition, leading to a d<sub>31</sub> piezoelectric coefficient, in magnitude, of 0.52 × 10<sup>−12</sup> C/N. |
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| id | doaj.art-23cafaf2e9b84fc4a6c73f3ecb4fc744 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T13:29:55Z |
| publishDate | 2022-03-01 |
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| spelling | doaj.art-23cafaf2e9b84fc4a6c73f3ecb4fc7442023-11-30T21:19:28ZengMDPI AGMaterials1996-19442022-03-01156209010.3390/ma15062090Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum SubstratesDaniele Desideri0Enrico Bernardo1Alain Jody Corso2Federico Moro3Maria Guglielmina Pelizzo4Department of Industrial Engineering, University of Padova, via Gradenigo 6/a, 35131 Padova, ItalyDepartment of Industrial Engineering, University of Padova, via F. Marzolo 9, 35131 Padova, ItalyInstitute for Photonics and Nanotechnologies (CNR-IFN), National Research Council of Italy, via Trasea 7, 35131 Padova, ItalyDepartment of Industrial Engineering, University of Padova, via Gradenigo 6/a, 35131 Padova, ItalyInstitute for Electronics, Information Engineering and Telecommunications (CNR-IEIIT), National Research Council of Italy, via Gradenigo 6/b, 35131 Padova, ItalyThe realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development of transducers for applications with a working temperature up to about 600 °C. The present paper deals with the realization of AlN thick films by means of reactive magnetron sputtering with a pulsed DC power supply, operating in continuous mode for 50 h. Two values (0.4 and 0.8) of nitrogen concentration were used; operative pressure and power were set at 0.3 Pa and 150 W, respectively. The thickness of the obtained aluminum nitride films on the aluminum substrate, assessed with a profilometer, varied from 20 to 30 µm. The preferential orientation of AlN crystals was verified by X-ray diffraction. Finally, as the main focus of the investigation, the films underwent electrical characterization by means of an LCR-meter used on a parallel plate capacitor set-up and a test system based on a cantilever beam configuration. AlN conductivity and <i>ε</i><sub>33</sub> permittivity were derived in the 100 Hz–300 kHz frequency range. Magnetron sputtering operation with nitrogen concentration equal to 0.4 resulted in the preferred operative condition, leading to a d<sub>31</sub> piezoelectric coefficient, in magnitude, of 0.52 × 10<sup>−12</sup> C/N.https://www.mdpi.com/1996-1944/15/6/2090AC conductivity<i>ε</i><sub>33</sub> permittivityaluminum nitrided<sub>31</sub> piezoelectric coefficientmagnetron sputteringthick film |
| spellingShingle | Daniele Desideri Enrico Bernardo Alain Jody Corso Federico Moro Maria Guglielmina Pelizzo Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates Materials AC conductivity <i>ε</i><sub>33</sub> permittivity aluminum nitride d<sub>31</sub> piezoelectric coefficient magnetron sputtering thick film |
| title | Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates |
| title_full | Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates |
| title_fullStr | Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates |
| title_full_unstemmed | Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates |
| title_short | Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates |
| title_sort | electrical properties of aluminum nitride thick films magnetron sputtered on aluminum substrates |
| topic | AC conductivity <i>ε</i><sub>33</sub> permittivity aluminum nitride d<sub>31</sub> piezoelectric coefficient magnetron sputtering thick film |
| url | https://www.mdpi.com/1996-1944/15/6/2090 |
| work_keys_str_mv | AT danieledesideri electricalpropertiesofaluminumnitridethickfilmsmagnetronsputteredonaluminumsubstrates AT enricobernardo electricalpropertiesofaluminumnitridethickfilmsmagnetronsputteredonaluminumsubstrates AT alainjodycorso electricalpropertiesofaluminumnitridethickfilmsmagnetronsputteredonaluminumsubstrates AT federicomoro electricalpropertiesofaluminumnitridethickfilmsmagnetronsputteredonaluminumsubstrates AT mariaguglielminapelizzo electricalpropertiesofaluminumnitridethickfilmsmagnetronsputteredonaluminumsubstrates |