The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization
Abstract The discovery of efficient magnetization switching upon device activation by spin Hall effect (SHE)-induced spin–orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for electronic systems with perpendicular magnetic anisotropy (PM...
| Main Authors: | , , , , |
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| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
Nature Portfolio
2024-01-01
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| סדרה: | NPG Asia Materials |
| גישה מקוונת: | https://doi.org/10.1038/s41427-023-00521-9 |