Reliability enhancement due to in-situ post-oxidation of sputtered MgO barrier in double MgO barrier magnetic tunnel junction
We have investigated the effects of in-situ post-oxidation (PO) of a sputtered MgO barrier in a double-MgO-barrier magnetic tunnel junction (MTJ) and found that the short error rate was significantly reduced, the magnetoresistance (MR) ratio was increased approximately 18%, and the endurance lifetim...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4985300 |