Structure and electronic properties of closed-ring defects in epitaxial graphene
A number of past studies have focused on point and line defects in graphene epitaxially grown on SiC substrates. However, few studies have investigated closed-ring defects formed within grain boundary loops. The present study addresses this issue by applying low-temperature scanning tunneling micros...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab8ee6 |