Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

Podrobná bibliografie
Hlavní autoři:	Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Takahiro Kimura, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Osamu Oda, Masaru Hori
Médium:	Článek
Jazyk:	English
Vydáno:	American Chemical Society 2020-10-01
Edice:	ACS Omega
On-line přístup:	https://doi.org/10.1021/acsomega.0c03865

Podobné jednotky

Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
Autor: Arun Kumar Dhasiyan, a další
Vydáno: (2024-05-01)

Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
Autor: Arun Kumar Dhasiyan, a další
Vydáno: (2024-12-01)

Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)
Autor: Frank Wilson Amalraj, a další
Vydáno: (2018-11-01)

Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature
Autor: Shang Chen, a další
Vydáno: (2012-06-01)

Study of sputtered tin schottky barrier diode for Gan-hemt applications
Autor: Li, Kang
Vydáno: (2016)

Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
Autor: Shamsuddin, Siti Nur Atikah
Vydáno: (2019)

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN
Autor: Yusuke Sakai, a další
Vydáno: (2013-08-01)

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy
Autor: Aditya Prabaswara, a další
Vydáno: (2020-04-01)

Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering
Autor: R. S. de Oliveira, a další
Vydáno: (2023-07-01)

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
Autor: Kohei Ueno, a další
Vydáno: (2017-12-01)

Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications
Autor: Ryota Maeda, a další
Vydáno: (2024-01-01)

Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
Autor: Md Taib, Muhamad Ikram
Vydáno: (2016)

Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
Autor: Katrin Pingen, a další
Vydáno: (2025-03-01)

Characterization and simulation of sputtering etched profile by focused gallium ion beam on GaN substrate
Autor: Xi Lin, a další
Vydáno: (2022-04-01)

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
Autor: Kohei Ueno, a další
Vydáno: (2019-07-01)

Rapid Metabolic Recovery of Donor Circulatory Death Liver Graft Using Whole Blood Perfusion: A Pig Study
Autor: Syuhei Yoshimoto, MS, a další
Vydáno: (2021-07-01)

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
Autor: Atsushi Kobayashi, a další
Vydáno: (2023-01-01)

Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates
Autor: Elena Alexandra Serban, a další
Vydáno: (2017-09-01)

Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
Autor: Mathias Forsberg, a další
Vydáno: (2017-04-01)

Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow
Autor: Christoph Sürgers, a další
Vydáno: (2024-01-01)

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
Autor: Yasuaki Arakawa, a další
Vydáno: (2016-08-01)

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers
Autor: Shuo-Wei Chen, a další
Vydáno: (2016-04-01)

Development of Removable Hollow Cathode Discharge Apparatus for Sputtering Solid Metals
Autor: Daisuke Ishikawa, a další
Vydáno: (2019-01-01)

High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN
Autor: Ali, A.H., a další
Vydáno: (2016)

Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target
Autor: P. Döring, a další
Vydáno: (2024-01-01)

Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors
Autor: Seoung-Hyoun Kim, a další
Vydáno: (2023-01-01)

Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition
Autor: Hirotsugu Sugiura, a další
Vydáno: (2019-01-01)

Wave-packet effects: a solution for isospin anomalies in vector-meson decay
Autor: Kenzo Ishikawa, a další
Vydáno: (2023-10-01)

Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique
Autor: Shinji Yamada, a další
Vydáno: (2024-01-01)

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
Autor: Li, Yang, a další
Vydáno: (2017)

Sputter Deposited Nanocarbon Film Electrodes for Electrochemical Analysis of Biomolecules
Autor: Osamu NIWA, a další
Vydáno: (2024-02-01)

The physics of sputtering
Autor: Stocker, B. J.
Vydáno: (1962)

Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit
Autor: R. S. de Oliveira, a další
Vydáno: (2022-01-01)

Plasma-Treated Sputtered Nanocarbon Film Electrodes for Suppressing Electrochemical Fouling by Serotonin
Autor: Saki OHTA, a další
Vydáno: (2020-09-01)

Sputtering by particle bombardment III : Characteristics of sputtered particles, technical applications /
Autor: Wittmaack, K.
Vydáno: (1991)

Green-wavelength GaN-based photonic-crystal surface-emitting lasers
Autor: Natsuo Taguchi, a další
Vydáno: (2024-01-01)

Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
Autor: Thi-Thuy-Nga Nguyen, a další
Vydáno: (2022-11-01)

Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance
Autor: Hideshi Miyajima, a další
Vydáno: (2019-05-01)

Visible light modulator by sputter-deposited lithium niobate
Autor: Hideaki Fukuzawa, a další
Vydáno: (2022-06-01)

Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
Autor: Tahan, Muliana
Vydáno: (2021)