Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

समान संसाधन

• Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
  द्वारा: Arun Kumar Dhasiyan, और अन्य
  प्रकाशित: (2024-05-01)
• Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
  द्वारा: Arun Kumar Dhasiyan, और अन्य
  प्रकाशित: (2024-12-01)
• Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)
  द्वारा: Frank Wilson Amalraj, और अन्य
  प्रकाशित: (2018-11-01)
• Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature
  द्वारा: Shang Chen, और अन्य
  प्रकाशित: (2012-06-01)
• Study of sputtered tin schottky barrier diode for Gan-hemt applications
  द्वारा: Li, Kang
  प्रकाशित: (2016)