Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

Схожі ресурси

• Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
  за авторством: Arun Kumar Dhasiyan, та інші
  Опубліковано: (2024-05-01)
• Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
  за авторством: Arun Kumar Dhasiyan, та інші
  Опубліковано: (2024-12-01)
• Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature
  за авторством: Shang Chen, та інші
  Опубліковано: (2012-06-01)
• Study of sputtered tin schottky barrier diode for Gan-hemt applications
  за авторством: Li, Kang
  Опубліковано: (2016)
• Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
  за авторством: Shamsuddin, Siti Nur Atikah
  Опубліковано: (2019)