A Novel Method to Fabricate Silicon Nanowire <it>p</it>&#8211;<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping

A Novel Method to Fabricate Silicon Nanowire <it>p</it>&#8211;<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping

<p>Abstract</p> <p>We demonstrate a novel method to fabricate an axial <it>p</it>&#8211;<it>n</it> junction inside &lt;111&gt; oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ do...

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Bibliographic Details
Main Authors: K&#246;gler Reinhard, Skorupa Wolfgang, Kanungo PratyushDas, Werner Peter, G&#246;sele Ulrich
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
Nanowire
<it>p</it>&#8211;<it>n</it> Junction
Ion implantation
In-situ doping
Electrical properties
Online Access:http://dx.doi.org/10.1007/s11671-009-9472-x

Internet

http://dx.doi.org/10.1007/s11671-009-9472-x

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