A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping
<p>Abstract</p> <p>We demonstrate a novel method to fabricate an axial <it>p</it>–<it>n</it> junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ do...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2009-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-009-9472-x |
| _version_ | 1797762101335293952 |
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| author | Kögler Reinhard Skorupa Wolfgang Kanungo PratyushDas Werner Peter Gösele Ulrich |
| author_facet | Kögler Reinhard Skorupa Wolfgang Kanungo PratyushDas Werner Peter Gösele Ulrich |
| author_sort | Kögler Reinhard |
| collection | DOAJ |
| description | <p>Abstract</p> <p>We demonstrate a novel method to fabricate an axial <it>p</it>–<it>n</it> junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~10<sup>18</sup>cm<sup>−3</sup>), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 10<sup>19</sup> cm<sup>−3</sup>. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.</p> |
| first_indexed | 2024-03-12T19:23:32Z |
| format | Article |
| id | doaj.art-24640d68a28c48e1bf772329f4292c49 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:23:32Z |
| publishDate | 2009-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-24640d68a28c48e1bf772329f4292c492023-08-02T04:58:00ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-0151243246A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ DopingKögler ReinhardSkorupa WolfgangKanungo PratyushDasWerner PeterGösele Ulrich<p>Abstract</p> <p>We demonstrate a novel method to fabricate an axial <it>p</it>–<it>n</it> junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~10<sup>18</sup>cm<sup>−3</sup>), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 10<sup>19</sup> cm<sup>−3</sup>. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.</p>http://dx.doi.org/10.1007/s11671-009-9472-xNanowire<it>p</it>–<it>n</it> JunctionIon implantationIn-situ dopingElectrical properties |
| spellingShingle | Kögler Reinhard Skorupa Wolfgang Kanungo PratyushDas Werner Peter Gösele Ulrich A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping Nanoscale Research Letters Nanowire <it>p</it>–<it>n</it> Junction Ion implantation In-situ doping Electrical properties |
| title | A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping |
| title_full | A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping |
| title_fullStr | A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping |
| title_full_unstemmed | A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping |
| title_short | A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping |
| title_sort | novel method to fabricate silicon nanowire it p it 8211 it n it junctions by a combination of ion implantation and in situ doping |
| topic | Nanowire <it>p</it>–<it>n</it> Junction Ion implantation In-situ doping Electrical properties |
| url | http://dx.doi.org/10.1007/s11671-009-9472-x |
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