Low Temperature Area Selective Atomic Layer Deposition of Ruthenium Dioxide Thin Films Using Polymers as Inhibition Layers

Abstract Area selective atomic layer deposition (AS‐ALD) is an interesting bottom‐up approach due to its self‐aligned fabrication potential. Ruthenium dioxide (RuO2) is an important material for several applications, including microelectronics, demanding area selective processing. Herein, it is show...

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Bibliographic Details
Main Authors: Nithin Poonkottil, Hannes Rijckaert, Khannan Rajendran, Robin R. Petit, Lisa I. D. J. Martin, Dries Van Thourhout, Isabel Van Driessche, Christophe Detavernier, Jolien Dendooven
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Materials Interfaces
Subjects:
Online Access:https://doi.org/10.1002/admi.202201934