Low Temperature Area Selective Atomic Layer Deposition of Ruthenium Dioxide Thin Films Using Polymers as Inhibition Layers
Abstract Area selective atomic layer deposition (AS‐ALD) is an interesting bottom‐up approach due to its self‐aligned fabrication potential. Ruthenium dioxide (RuO2) is an important material for several applications, including microelectronics, demanding area selective processing. Herein, it is show...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2023-03-01
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Series: | Advanced Materials Interfaces |
Subjects: | |
Online Access: | https://doi.org/10.1002/admi.202201934 |