Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding
Thinning the buffer layer thickness between the GaN epilayer and Si substrate without introducing large residual stress is persistently desired for GaN-on-Si devices to promote their thermal budgets and low-cost, multifunctional applications. In this work, the GaN-on-Si heterostructures were directl...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-01-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/2/217 |