Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices

Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices

Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide. It is derived from the Tri-MethylGallium (TMG/TMGa), a...

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Bibliographic Details
Main Authors: Naveenbalaji Gowthaman, Viranjay M Srivastava
Format: Article
Language:Spanish
Published: Instituto Tecnológico de Costa Rica 2021-11-01
Series:Tecnología en Marcha
Subjects:
double-gate mosfet
high-speed devices
high-k dielectric
microelectronics
nanotechnology
vlsi
Online Access:https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/5966

Internet

https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/5966

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