Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices
Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide. It is derived from the Tri-MethylGallium (TMG/TMGa), a...
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| Format: | Article |
| Language: | Spanish |
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Instituto Tecnológico de Costa Rica
2021-11-01
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| Series: | Tecnología en Marcha |
| Subjects: | |
| Online Access: | https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/5966 |
| _version_ | 1811317618191106048 |
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| author | Naveenbalaji Gowthaman Viranjay M Srivastava |
| author_facet | Naveenbalaji Gowthaman Viranjay M Srivastava |
| author_sort | Naveenbalaji Gowthaman |
| collection | DOAJ |
| description | Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide. It is derived from the Tri-MethylGallium (TMG/TMGa), and Arsine (AsH3), both the chemicals are pyrophoric and toxic. The resistance is less between source and drain contacts in the case of AlGaAs so that it has been proposed as a material to grow contacts on Indium Phosphide (InP) layer. The AlGaAs uses an ion implantation model for a design purpose which lowers the thermal power while the operation of the device. The parasitic capacitance has to be taken care of while designing a device using this material since the capacitance affects much in the AlGaAs based devices. The average velocity of the electrons has been observed to be increased by 14.63 % in the Au-gate (gate-1) and Pt-gate (gate-2) material-based Double-Gate (DG) MOSFET compared to the Silicon-based DG MOSFET. This paves the way for higher electron mobility, in turn, it can be used in highfrequency device manufacturing. The proposed material can be used in high-speed hybrid applications such as HEMTs and radiofrequency devices for long-haul communication. |
| first_indexed | 2024-04-13T12:11:20Z |
| format | Article |
| id | doaj.art-24b0984ce15c48f4b0bb9d6eeab6e472 |
| institution | Directory Open Access Journal |
| issn | 0379-3982 2215-3241 |
| language | Spanish |
| last_indexed | 2024-04-13T12:11:20Z |
| publishDate | 2021-11-01 |
| publisher | Instituto Tecnológico de Costa Rica |
| record_format | Article |
| series | Tecnología en Marcha |
| spelling | doaj.art-24b0984ce15c48f4b0bb9d6eeab6e4722022-12-22T02:47:28ZspaInstituto Tecnológico de Costa RicaTecnología en Marcha0379-39822215-32412021-11-01ág 101610.18845/tm.v34i6.59665240Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devicesNaveenbalaji Gowthaman0Viranjay M Srivastava1Department of Electronic Engineering, Howard College, University of KwaZulu- Natal, Durban, 4041, South Africa. Department of Electronic Engineering, Howard College, University of KwaZulu- Natal, Durban, 4041, South AfricaAluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide. It is derived from the Tri-MethylGallium (TMG/TMGa), and Arsine (AsH3), both the chemicals are pyrophoric and toxic. The resistance is less between source and drain contacts in the case of AlGaAs so that it has been proposed as a material to grow contacts on Indium Phosphide (InP) layer. The AlGaAs uses an ion implantation model for a design purpose which lowers the thermal power while the operation of the device. The parasitic capacitance has to be taken care of while designing a device using this material since the capacitance affects much in the AlGaAs based devices. The average velocity of the electrons has been observed to be increased by 14.63 % in the Au-gate (gate-1) and Pt-gate (gate-2) material-based Double-Gate (DG) MOSFET compared to the Silicon-based DG MOSFET. This paves the way for higher electron mobility, in turn, it can be used in highfrequency device manufacturing. The proposed material can be used in high-speed hybrid applications such as HEMTs and radiofrequency devices for long-haul communication.https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/5966double-gate mosfethigh-speed deviceshigh-k dielectricmicroelectronicsnanotechnologyvlsi |
| spellingShingle | Naveenbalaji Gowthaman Viranjay M Srivastava Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices Tecnología en Marcha double-gate mosfet high-speed devices high-k dielectric microelectronics nanotechnology vlsi |
| title | Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices |
| title_full | Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices |
| title_fullStr | Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices |
| title_full_unstemmed | Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices |
| title_short | Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices |
| title_sort | dual gate material au and pt based double gate mosfet for high speed devices |
| topic | double-gate mosfet high-speed devices high-k dielectric microelectronics nanotechnology vlsi |
| url | https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/5966 |
| work_keys_str_mv | AT naveenbalajigowthaman dualgatematerialauandptbaseddoublegatemosfetforhighspeeddevices AT viranjaymsrivastava dualgatematerialauandptbaseddoublegatemosfetforhighspeeddevices |