Structure and transparent conductive properties of F-doped ZnO(FZO) thin films prepared by reactive magnetron sputtering
F-doped ZnO (FZO) films were prepared by reactive sputtering using Zn/ZnO/ZnF<sub>2</sub> mixture as the target at substrate temperature (<i>T</i><sub>s</sub>) of 150℃ and 300℃ and sputtering atmosphere of Ar+O<sub>2</sub> and Ar+H<sub>2</sub&...
Main Authors: | , , , |
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Format: | Article |
Language: | zho |
Published: |
Journal of Materials Engineering
2021-11-01
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Series: | Cailiao gongcheng |
Subjects: | |
Online Access: | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2021.000132 |