Structure and transparent conductive properties of F-doped ZnO(FZO) thin films prepared by reactive magnetron sputtering

F-doped ZnO (FZO) films were prepared by reactive sputtering using Zn/ZnO/ZnF<sub>2</sub> mixture as the target at substrate temperature (<i>T</i><sub>s</sub>) of 150℃ and 300℃ and sputtering atmosphere of Ar+O<sub>2</sub> and Ar+H<sub>2</sub&...

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Bibliographic Details
Main Authors: ZHU Bai-lin, ZHENG Si-long, XIE Ting, WU Jun
Format: Article
Language:zho
Published: Journal of Materials Engineering 2021-11-01
Series:Cailiao gongcheng
Subjects:
Online Access:http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2021.000132