High temperature and trap sates characterization of Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction

High temperature and trap sates characterization of Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction

In this work, the high temperature and trap sates characteristics have been investigated for Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction. By using high-Al AlGaN barrier and back barrier layers, the maximum current at 200 ℃ is reduced by 35%, which is much lower than 58% reduction for conve...

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Bibliographic Details
Main Authors: Shenglei Zhao, Bo Mei, Yi Sun, Shuang Cao, Yachao Zhang, Dan Zhu, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: Elsevier 2022-05-01
Series:Results in Physics
Subjects:
GaN
HEMT
AlGaN back barrier
Trap states
Power electronics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379722002030

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http://www.sciencedirect.com/science/article/pii/S2211379722002030

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