A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications

A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications

The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE). Therefore, a 12T SRAM-hardened circuit (RHB-12T cell) for the soft error recovery is proposed using the radiation hardening design (RHBD) conc...

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Bibliographic Details
Main Authors: Ruxue Yao, Hongliang Lv, Yuming Zhang, Xu Chen, Yutao Zhang, Xingming Liu, Geng Bai
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Micromachines
Subjects:
multi-node upset
read stability
single-event effect
static random-access memory (SRAM)
write ability
Online Access:https://www.mdpi.com/2072-666X/14/7/1305

Internet

https://www.mdpi.com/2072-666X/14/7/1305

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