Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells
The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. T...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2012-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6378385/ |