Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells
The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. T...
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IEEE
2012-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/6378385/ |
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| author | Lifang Xu Dinesh Patel Carmen S. Menoni Jon M. Pikal Jeng-Ya Yeh J. Y. T. Huang Luke J. Mawst Nelson Tansu |
| author_facet | Lifang Xu Dinesh Patel Carmen S. Menoni Jon M. Pikal Jeng-Ya Yeh J. Y. T. Huang Luke J. Mawst Nelson Tansu |
| author_sort | Lifang Xu |
| collection | DOAJ |
| description | The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. These two transitions are identified as the first quantized electron state to heavy-hole state (e1-hh1) and electron to light-hole state (e1-lh1) from the analysis of polarized photocurrent measurements in combination with k · p simulation of the band structure. At longer time delays, the dilute-nitride QW exhibits carrier localization at low temperatures and faster recombination time at higher temperatures. The PL dynamics characteristics observed in the InGaAsN QW are different from those measured from the InGaAs QW. |
| first_indexed | 2024-12-14T10:21:14Z |
| format | Article |
| id | doaj.art-255057c9a25348109380d3f4a8757862 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-14T10:21:14Z |
| publishDate | 2012-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-255057c9a25348109380d3f4a87578622022-12-21T23:06:35ZengIEEEIEEE Photonics Journal1943-06552012-01-01462382238910.1109/JPHOT.2012.22334656378385Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum WellsLifang Xu0Dinesh Patel1Carmen S. Menoni2Jon M. Pikal3Jeng-Ya Yeh4J. Y. T. Huang5Luke J. Mawst6Nelson Tansu7<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA<formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula>Department of Electrical and Computer Engineering, University of Wyoming, Laramie, WY, USA<formula formulatype="inline"><tex Notation="TeX">$^{3}$</tex></formula>Reed Center for Photonics, Department of Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA<formula formulatype="inline"><tex Notation="TeX">$^{3}$</tex></formula>Reed Center for Photonics, Department of Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA<formula formulatype="inline"><tex Notation="TeX">$^{3}$</tex></formula>Reed Center for Photonics, Department of Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA<formula formulatype="inline"><tex Notation="TeX">$^{4}$</tex></formula>Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, USAThe time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. These two transitions are identified as the first quantized electron state to heavy-hole state (e1-hh1) and electron to light-hole state (e1-lh1) from the analysis of polarized photocurrent measurements in combination with k · p simulation of the band structure. At longer time delays, the dilute-nitride QW exhibits carrier localization at low temperatures and faster recombination time at higher temperatures. The PL dynamics characteristics observed in the InGaAsN QW are different from those measured from the InGaAs QW.https://ieeexplore.ieee.org/document/6378385/InGaAsN quantum well (QW)carrier recombination dynamicscarrier localization1.3-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> lasershole leakage |
| spellingShingle | Lifang Xu Dinesh Patel Carmen S. Menoni Jon M. Pikal Jeng-Ya Yeh J. Y. T. Huang Luke J. Mawst Nelson Tansu Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells IEEE Photonics Journal InGaAsN quantum well (QW) carrier recombination dynamics carrier localization 1.3-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> lasers hole leakage |
| title | Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells |
| title_full | Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells |
| title_fullStr | Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells |
| title_full_unstemmed | Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells |
| title_short | Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells |
| title_sort | carrier recombination dynamics investigations of strain compensated ingaasn quantum wells |
| topic | InGaAsN quantum well (QW) carrier recombination dynamics carrier localization 1.3-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> lasers hole leakage |
| url | https://ieeexplore.ieee.org/document/6378385/ |
| work_keys_str_mv | AT lifangxu carrierrecombinationdynamicsinvestigationsofstraincompensatedingaasnquantumwells AT dineshpatel carrierrecombinationdynamicsinvestigationsofstraincompensatedingaasnquantumwells AT carmensmenoni carrierrecombinationdynamicsinvestigationsofstraincompensatedingaasnquantumwells AT jonmpikal carrierrecombinationdynamicsinvestigationsofstraincompensatedingaasnquantumwells AT jengyayeh carrierrecombinationdynamicsinvestigationsofstraincompensatedingaasnquantumwells AT jythuang carrierrecombinationdynamicsinvestigationsofstraincompensatedingaasnquantumwells AT lukejmawst carrierrecombinationdynamicsinvestigationsofstraincompensatedingaasnquantumwells AT nelsontansu carrierrecombinationdynamicsinvestigationsofstraincompensatedingaasnquantumwells |