Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. T...

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Bibliographic Details
Main Authors: Lifang Xu, Dinesh Patel, Carmen S. Menoni, Jon M. Pikal, Jeng-Ya Yeh, J. Y. T. Huang, Luke J. Mawst, Nelson Tansu
Format: Article
Language:English
Published: IEEE 2012-01-01
Series:IEEE Photonics Journal
Subjects:
InGaAsN quantum well (QW)
carrier recombination dynamics
carrier localization
1.3-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> lasers
hole leakage
Online Access:https://ieeexplore.ieee.org/document/6378385/

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