Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer
The serious separation of electron–hole wavefunctions, which is caused by the built-in electric field, prevents electron–hole radiative recombination in quantum wells (QWs) in high-In-content InGaN-based red light-emitting diodes (LEDs). Here, we propose a staggered structure that inserts an ultrath...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-06-01
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| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/10/6/647 |