Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
A physics-based low frequency noise (LFN) model for AlxGa1−xN/GaN high electron mobility transistors (HEMTs) is proposed in this article. By treating the distributed low-density surface donor states as the responsible mechanism and exhibiting charge neutrality in combination with the electric field...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0156798 |