Doping-induced enhancement of anomalous Hall coefficient in Fe-Sn nanocrystalline films for highly sensitive Hall sensors
We experimentally investigated the contribution of intrinsic anomalous Hall effect (AHE) in ferromagnetic Fe-Sn nanocrystalline films by means of impurity doping. We found that some heavy transition elements such as Ta, W, and Mo are effective for increasing the anomalous Hall resistivity of Fe-Sn f...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5126499 |