Doping-induced enhancement of anomalous Hall coefficient in Fe-Sn nanocrystalline films for highly sensitive Hall sensors

Doping-induced enhancement of anomalous Hall coefficient in Fe-Sn nanocrystalline films for highly sensitive Hall sensors

We experimentally investigated the contribution of intrinsic anomalous Hall effect (AHE) in ferromagnetic Fe-Sn nanocrystalline films by means of impurity doping. We found that some heavy transition elements such as Ta, W, and Mo are effective for increasing the anomalous Hall resistivity of Fe-Sn f...

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Bibliographic Details
Main Authors:	Kohei Fujiwara, Yosuke Satake, Junichi Shiogai, Atsushi Tsukazaki
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-11-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.5126499

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