Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations
The c-axis aligned crystalline indium-gallium-zinc-oxide field-effect transistor (CAAC-IGZO FET), exhibiting an extremely low off-state leakage current (~10<sup>−22</sup> A/μm), has promised to be an ideal candidate for Dynamic Random Access Memory (DRAM) applications. However, the insta...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/16/6/2282 |