OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket

OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket

In this paper, an In<sub>0.53</sub>Ga<sub>0.47</sub>As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N<sup>+</sup>-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Un...

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Bibliographic Details
Main Authors: Hu Liu, Wenting Zhang, Zaixing Wang, Yao Li, Huawei Zhang
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Materials
Subjects:
tunnel field-effect transistor
OFF-state leakage suppression
electron–hole bilayer
line tunneling
Online Access:https://www.mdpi.com/1996-1944/15/19/6924

Internet

https://www.mdpi.com/1996-1944/15/19/6924

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